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BC137 29390 11718 00390 2SB1015 06BEEG3F MBRB1 KEL10
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  12-10-2002 SD1495-03 description: description: description: description: the SD1495-03 is a silicon npn transistor designed for 900 - 960 mhz base station applications. gold metalization and internal impedance matching provide superior reliability and consistent broad band performance. absolute maximum ratings absolute maximum ratings absolute maximum ratings absolute maximum ratings (tcase = 25 c) s y mbol paramete r v alue unit v cbo collector-base voltage 50 v v ceo collector-emitter voltage 30 v v ces collector-emitter voltage 50 v v ebo emitter-base voltage 4.0 v i c device current 9.0 a p diss power dissi p ation 100 w t j junction temperature +200 c t stg storage temperature -65 to + 150 c thermal data thermal data thermal data thermal data r th(j-c) thermal resistance junction-case 1.5 c/w features features features features ? 960 mhz ? 24 volts ? p out = 30 watts ? g p = 7.0 db minimum ? imput matching ? common base configuration rf & microwave transistors 800 / 900 mhz applications
12-10-2002 SD1495-03 electrical specifications (tcase = 25 electrical specifications (tcase = 25 electrical specifications (tcase = 25 electrical specifications (tcase = 25 c) c) c) c) static static static static s y mbol test conditions v alue min. t yp . max. unit bv ces i c = 50ma v be = 0v 50 --- --- v bv ceo i c = 50ma i b = 0ma 30 --- --- v bv ebo i e = 10ma i c = 0ma 4.0 --- --- v i cbo v cb = 15v i e = 0ma --- --- 5 ma hfe v ce = 5v i c = 1a 10 --- 120 --- dynamic dynamic dynamic dynamic s y mbol test conditions v alue min. t yp . max. unit p out f = 960mhz p in = 6.0w v ce = 24v 30 --- --- w g p f = 960mhz p in = 6.0w v ce = 24v 7.0 --- --- db c f = 960mhz p in = 6.0w v ce = 24v 50 --- --- % c ob f = 1 mhz v cb = 24v --- --- 55 pf
12-10-2002 SD1495-03 package mechanical data


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